| Description: |
The HMC375LP3 high dynamic range GaAs PHEMT MMIC Low Noise Amplifi er is ideal for GSM & CDMA cellular basestation front-end receivers operating between 1.7 and 2.2 GHz. This LNA has been optimized to provide 0.9 dB noise fi gure, 17 dB gain and +33 dBm output IP3 from a single supply of +5.0V @ 136mA. Input and output return losses are 14 dB typical with the LNA requiring minimal external components to optimize the RF input match, RF ground and DC bias. The HMC375LP3 shares the same package with the HMC356LP3 and HMC372LP3 high IP3 LNAs. A low cost, leadless 3x3 mm (LP3) SMT QFN package houses the low noise amplifi er.
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| Features: |
Noise Figure: 0.9 dB+34 dBm Output IP3Gain: 17 dBVery Stable Gain vs. Supply & TemperatureSingle Supply: +5.0 V @ 136 mA50 Ohm Matched Output
|
| (Absolute) Maximum Ratings: |
| Drain Bias Voltage (Vdd) |
+8.0 Vdc |
RF Input Power (RFin)(Vs = +5.0 Vdc)
|
+15 dBm |
| Channel Temperature |
150 °C |
Continuous Pdiss (T= 85 °C)
(derate 15.6 mW/°C above 85 °C) |
1.015 W |
Thermal Resistance
(channel to die bottom) |
64.1 °C/W |
| Storage Temperature |
-65 to +150 °C |
| Operating Temperature |
-40 to +85 °C |
|
| Applications: |
The HMC375LP3 is ideal for basestation receivers:• GSM, GPRS & EDGE• CDMA & W-CDMA• DECT
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| Pinout: |
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| PDF for hmc375lp3: |
- File Size:245565 KB
- Manufacturer:HITTITE [Hittite Microwave Corporation]
|
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